Atomic Layer Deposition (ALD) Application up to 450°C
A vacuum brazed-in 6061 T6 aluminum heater with a 2-3 Ra µin surface finish.
Innovative manufacturing process lowers cost.
Vacuum Heater Pedestal for the manufacturing of 300mm silicon wafers.
Exceptional uniformity, vacuum integrity, temperature stability.
Better Uniformity, Higher Temperature Threshold
Heating solution for an ALD Vacuum Chamber Heater.
Beyond the limits of aluminum.
Provides excellent temperature uniformity at lower cost.
Can be used in vacuum and atmosphere for electronic processing of next-generation displays such as computer monitors and smartphones.
Solution in a vacuum chamber for the testing and processing of silicon and glass components.
Industrial process tools used for memory devices, transistors, crystal silicon, microprocessors, photovoltaic (PV) cells, and thin film PV cells. All these applications required a shrewd knowledge of temperature, BCE continues to innovate and provide customer specific thermal solutions that are critical to next generation equipment and processes.
Resistive heaters that provide a very high level of temperature uniformity across the semiconductor wafer to ensure consistent quality plus highly repeatable and efficient wafer processing. Aluminum 6061-T6 heaters are vacuum brazed with operating temperatures up to 450°C, temperature uniformity of +/-1%, and can have a 2-3Ra µin surface finish. The heaters can be tested for up to 100 m-ohm Isolation at 1000VDC and Hi-pot of 2E+1,000 or greater at 1-3mA.
Stainless steel and Inconel heater plates/chucks can reach temperatures of up to 700°C+ with ceramic thermal breaks in between the flange and the base plate. These heater plates are generally welded with three mating plugs for compression and have an outside weld on the edge. They can be built with grounded internal thermocouples for a quick response to the resistance wire for ramping and high temperature monitoring. This ensures that over-temperature circuit breaks can be minimized while maintaining the quickest reaction time in scaling down a fast ramp rate.